Dry Etching System : Hitachi High-Technologies Corporation

UHF-ECR Plasma Etch System U-8150

New 300mm UHF-ECR Plasma Etch System.

New Silicon Etch System for improved WtW and WiW CD control targeting the 45 and 32nm tecnology nodes.

Improved design resulting in increased productivity and yield compared to U-7000 system.


-	Yield Enhancements Symmetrical exhaust camber / New material chamber / Multi-waves monitor / Advanced temperature controlled electrode
-	Productivity Enhancements High speed and low particle transfer system / Replaceable process chamber

New 300mm UHF-ECR Plasma Etch System.

New Dielectric Etch system with enhanced process window and new plasma source design.
Improved WtW and WiW CD control targeting the 45 and 32nm tecnology nodes.

Improved design resulting in increased productivity and yield.


-	Yield Enhancements New material chamber / Multi-waves monitor / Advanced temperature controlled electrode
-	Productivity Enhancements ECP* chamber / High speed in-situ cleaning / High speed and reduced defect density

*	ECP : Electrically Confinement Plasma

200mm / 300mm UHF-ECR Plasma Etch System for Gate,Metal and Dielectric film stacks.

Excellent WtW and WiW CD control targeting the 65nm technology node.
Superior Chamber design resulting in uniform gas distribution and by-product control.
High selectivity etching with low deposition and superior profile control.
APC Capability(Option)

Industry Leading Reliability and Uniformily for the 45nm Technology Node.

New Chamber design enhanced process window and provides productivity improvements.
High Density Plasma source provides world class WtW and WiW CD control targeting the 45 and 32nm technology nodes.
Improved design resulting in increased productivity, lower CoC and reduced defect density.
FA/CIM and APC Capability.
APC Capability(Option)