Hitachi High-Tech's U-8250 offers high speed etching for high aspect ratio holes utilizing a VHF(*1) plasma source which has high electrical dissociation efficiency. Further, it is suitable for various applications such as spacer, hard mask and multi-layer resist patterning.
*1 VHF : Very High Frequency
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U-8250 |
By changing a distance between a shower plate and a wafer, adequate process conditions can be obtained for each film within a multiple film stack. So, for various applications from high aspect ratio hole formation to hard mask patterning, the U-8250 offers high productivity and good uniformity.
Additionally, excellent uniformity is achieved by controlling gas injection and wafer temperature separately in a wafer center and peripheral.
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Main features
| Applicable wafer diameter |
300mm |
| System configuration |
4 chambers (max.) |
* The photograph is partially different from actual system.
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