

Hitachi High-Tech's silicon etch system is based on an ECR(*1) plasma source which is able to generate a stable high-density plasma at very low pressure (< 0.1 Pa). Microwave ECR plasma can provide a wide process window in both R & D and mass production through accurate plasma parameter management, such as plasma distribution or plasma position control. Plasma control technology can also be applied to dry cleaning to maintain a more stable chamber condition.
*1 ECR : Electron Cyclotron Resonance
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M-8000 Series |
M-8000 Series is utilized for hard mask and silicon etching for 32nm and beyond. Hitachi High-Tech developed new process flows, such as double patterning and new material etch processes such as high-k dielectric/metal gate through JDPs(*2) with device makers and material / tool suppliers. Hitachi High-Tech's etch system provides superior profile controllability and CD uniformity within wafer with a symmetrical chamber that combines an ECR plasma source, high speed wafer temperature control, and high vacuum exhaust control technology. Hitachi High-Tech's AEC(*3) / APC(*4) technology with original data collection, analysis and control systems provide excellent productivity and reliability.
*2 JDP:Joint Development Program
*3 AEC:Advanced Equipment Control
*4 APC:Advanced Process Control
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Main features
| Applicable wafer diameter |
300mm |
| System configuration |
4 chambers (max.) |
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M-6000 series |
M-6000 Series is targeted for deep silicon trench etch of power devices used in mobile systems, home electrical appliances, automobiles, trains, etc. Low temperature etch technology and TM(*5) bias technology together with the ECR high density plasma source provide for a clean process, superior trench profiles without sidewall residue, and excellent productivity.
*5 TM : Time Modulation
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Main features
| Applicable wafer diameter |
150mm,200mm |
| System configuration |
2 etch+2 ash (max.) |
* These photographs are partially different from actual systems.

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