Dry Etch System

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Advanced etch technology presented at the SEMI Technology Symposium.

December 3, 2009 in Session 7 "Trends of Advanced Etch Technology (DPS^(*1) collaboration) and the Latest Strategy of Etch Equipment Makers" of SEMI^(*2) Technology Symposium 2009, Hitachi High-Tech presented "Strategies for Equipment and Process of Conductor Etch".

In recent years etch technology of advanced devices demand processing multilayered masks and three-dimensional structure devices including new materials such as the high dielectric constant gate insulation film or metal gate electrode and the need of double patterning for fine dimensional pattern formation beyond the lithographical exposure limit.
Fine dimensional processing, the reduction of I/D^(*3) bias and high within uniformity are required more than ever before from the etch processing of gate electrodes for advanced logic devices.
Hitachi High-Tech developed the M-8190XT which was the Microwave ECR^(*4) plasma etch equipment which enabled these new technologies. Furthermore, Hitachi High-Tech co-develop advanced processes with advanced device makers and materials and equipment manufacturers. In addition, for power devices, high etch technology is necessary, and Hitachi High-Tech supports deep silicon etch.

*1 DPS : The International Symposium on Dry Process
*2 SEMI : Semiconductor Equipment and Materials International
*3 I/D : Isolation / Dense
*4 ECR : Electron Cyclotron Resonance