Dry Etch System

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Etch process development for double patterning with self freezing ArF resist and spin on hard mask

Detailed results were reported together with JSR Corporation at SPIE^(*1) Advanced Lithography 2010, an international forum held in San Jose, California (USA).
(Presentation number: 7639-39 Date February 24th )

To support process cost reduction and increasing capability for the various techniques, we worked on LFLE^(*2) process with JSR Corporation, and we successfully developed the etch process for 32nm line & pace and 48nm contact hole with their self-freezing ArF resist and spin on hard mask.

Hitachi High-Tech is providing an M-8000 series for hard mask and Si etching system to support 32nm node and beyond, and continues to develop process techniques and equipment for next generation device manufacturing.

*1 SPIE : the Society of Photographic Instrumentation Engineers
*2 LELE : Litho Etch Litho Etch

[Data courtesy of : JSR Corporation]