Focused Ion Beam System FB2200 : Hitachi High-Technologies Corporation

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	Focused Ion Beam System FB2200

Focused Ion Beam System FB2200

The Next Generation for Higher Throughput, Precision & Quality.

Offering High-speed TEM Sample Preparation with Large area Ion Beam Milling.

Features

Over 60nAmps of ion beam current to enhance sample throughput
Low-damage specimen preparation with low accelerating voltage in-situ
Pinpoint precision sample preparation of thin films utilizing Hitachi's patented Micro-sampling^(*)
Compatible Holders^(*) for Hitachi SEM, TEM and STEM for rapid and simple sample transfer for further imaging and analysis

^(*):Option
*The instrument shown in photo includes options.

Specifications

Accelerating voltage		2 to 40 kV
Maximum beam current		60nA or higher
Maximum beam current density		50 A/cm² or higher
SIM resolution		6nm or better
Magnification range		60× to 300,000×
Ion optics	Ion source	Ga
	Beam limiting aperture	Motor-drive selection
	Lens/deflector	Electrostatic 2-stage lens/octopole electrostatic type
Deposition		2 gas sources (tungsten and carbon)
Fabrication functions		Box and vector scan patterning fabrication
Image acquisition		Maximum 2,000 × 2,000 pixels
Evacuation system	Column	Ion Pump × 2
	Sample Chamber	TMP × 1
	Pre-evacuation	Rotary pump × 2 (dry scroll pump optional)

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