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FIB (Focused lon Beam System)

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Focused lon Beam System FB-2100

 
FB-2100

(S)TEM/SEM specimen can be prepared with rapidity and accuracy.

  • High milling rate with accelerating voltage up to 40kV
  • In-situ microsample extraction from specific site with Hitachi's patented "Micro-sampling" (optional accessory)
  • Compatible specimen holder available for (S)TEM(HD-2700, HD-2300A, H-9500) and SEM(S-5500). (A common stage is to be selected.)
 
 

Micro sampling attachment

 
FB-2100

This device is used for cutting out the desired wafer part for analysis with STEM, TEM, etc. by ion beam in the vacuum chamber of FIB system and taking it out with a manipulator. Positional accuracy in sample preparation can be enhanced and preparation time can be shortened to about half an hour. (Already patented in Japan and U.S.A.)

 
 

3D analysis holder

 
FB-2100

This is a sample rotation holder commonly usable for FIB and STEM in order to observe a micro-sample processed in the shape of a pillar with an FIB system. It is effectively usable for 3-dimensional structural evaluation of electronic devices under miniaturization and for stereoscopic failure analysis.

 
 

CAD Navigation System
NASFA(Navigation System for Failure Analysis)

 
FB-2100

It can be checked to which wiring of CAD data an LSI pattern under observation with an FIB system corresponds. When coordinates in CAD data are specified, the sample stage of the system moves to the coordinates through interlink and a SIM image at the corresponding location is displayed. Also, CAD data and SIM image can be overlaid (overlay display). Therefore, condition of the lower-layer wiring can be easily checked and a substantial increase in the efficiency of analysis and repair work can be expected.

 
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