FIB (Focused lon Beam System)

Focused lon Beam System FB2200

The Next Generation for Higher Throughput, Precision & Quality. Offering High-speed TEM Sample Preparation with Large area lon Beam Milling. Over 60nAmps of ion beam current to enhance sample throughput Low-damage specimen preparation with low accelerating voltage in-situ Pinpoint precision sample preparation of thin films utilizing Hitachi's patented Micro-sampling(*) Compatible Holders(*) for Hitachi SEM, TEM and STEM for rapid and simple sample transfer for further imaging and analysis (*) Option

Micro sampling attachment

This device is used for cutting out the desired wafer part for analysis with STEM, TEM, etc. by ion beam in the vacuum chamber of FIB system and taking it out with a manipulator. Positional accuracy in sample preparation can be enhanced and preparation time can be shortened to about half an hour. (Already patented in Japan and U.S.A.)

3D analysis holder

This is a sample rotation holder commonly usable for FIB and STEM in order to observe a micro-sample processed in the shape of a pillar with an FIB system. It is effectively usable for 3-dimensional structural evaluation of electronic devices under miniaturization and for stereoscopic failure analysis.

CAD Navigation System NASFA(Navigation System for Failure Analysis)

It can be checked to which wiring of CAD data an LSI pattern under observation with an FIB system corresponds. When coordinates in CAD data are specified, the sample stage of the system moves to the coordinates through interlink and a SIM image at the corresponding location is displayed. Also, CAD data and SIM image can be overlaid (overlay display). Therefore, condition of the lower-layer wiring can be easily checked and a substantial increase in the efficiency of analysis and repair work can be expected.