Enables high-throughput analysis A micro-sampling method (patented in Japan and the U.S.) was developed as a tool for analyzing semiconductor devices which are moving rapidly toward smaller scales. It takes about 1 hour from picking up a micro-sample to analyzing it by STEM. The position accuracy is under 0.1µm.

Features

	FIB micro-sampling unit and FIB micro-sampling method

	An example of FIB micro-piller sampling
	A micro-pillar sample including an analysis point is directly cut out of semiconductor device. Micro-samples are cut out or trimmed in various shape by varying the incident FIB-direction.
	FIB micro-sampling method (Hitachi patent: JP2774884, USP5270552 )

System configuration example

FIB-STEM System     A new-developed semiconductor device evaluation system consists of FB2200 FIB system and HD-2700 200kV STEM. The system performs from searching defective points to analyzing structure in sub-nano meter scale within several hours.         FIB-TEM(STEM) compatible specimen holder (Hitachi patent: JP2842083)

Observation case

An example of DRAM observation     SEM image of a micro-pillar specimen on the needle stub Bright field STEM image of a micro-pillar specimen