Focused Ion & Electron Beam System nanoDUE'T NB5000 : Hitachi High-Technologies Corporation

Hitachi's high performance FIB-SEM provides unparalleled nano-analyses of devices and functional materials !!

Legendary Hitachi reliability and performance in an integrated system (Ultra-high performance FIB and high resolution FE-SEM) enabling high-throughput specimen preparation, high resolution imaging and analysis and precision nanofabrication. New low-damage fabrication techniques have been developed for materials sensitive to electron irradiation. Innovations in sample loading, sample navigation, and Micro-sampling increase analysis efficiency^(*1).

Features

Ultra-high performance FIB

Low CsFIB optics^(*2) deliver 50nA or more of beam current (@40kV) in an about 1µm spot-size. The high current enables unconventional large-area milling, hard material fabrication and high throughput multiple specimen preparation.

New Micro-sampling

Hitachi's patented Micro-sampling technology provides smooth probe motion. Also, the probe can be used for newly developed absorbed current imaging^(*1) to aid fault isolation.

High precision end-point detection

High resolution SEM allows high precision end-point detection. Section-view function, which displays an outline of the cross-section utilizing the real-time FIB image, is ideal for preparing electron irradiation sensitive specimens like low-K material.

High resolution SEM

Hitachi's unparalleled SEM column and detector design^(*2) enables high resolution SEM imaging during and after FIB fabrication.

Holder compatibility with TEM/STEM^(1)^(2)

A side entry STEM/TEM-type staqe^(*1) allows the use of the same specimen holder (compatible with NB5000 and Hitachi TEM/STEM). No tweezer handling of specimen during transfer results in higher throughput TEM/STEM analysis.

^(*1):Optional accessory
^(*2):Hitachi patent
Low Cs FIB optics: patent pending, Micro-sampling: JP2774884/US5270552, Section-view function: patent pending, SEM column and detector design: JP3081393/US5387793, Holder compatibility: JP2842083

Specifications

FIB	Accelerating voltage		1 - 40kV
	Beam current		50 nA or more @ 40kV (CP)
	SIM resolution		5nm @ 40kV (CP)
	Magnification		×60 - ×250,000
	Ion source		Ga Liquid Metal Ion Source
	Lens system		Low Cs 2-stage electrostatic lens system
SEM	Accelerating voltage		0.5 - 30kV
	SEM resolution		1.0nm @ 15kV (CP)
	Magnification	High Mag mode	×250 - ×800,000
		Low Mag mode	×70 - ×2,000
	Electron source		ZrO/W Schottky emission
	Lens system		3-stage electromagnetic lens reduction system
Signal selection	SEM		Upper SE, Lower SE, Absorbed current^(*1)
	FIB		Lower SE, Absorbed current^(*1)
Eucentric stage	Traverse range		X: 50mm (30mm^(2)), Y: 50mm (30mm^(2)), Z: 22mm
			T: -1.5 - 58.3°, R: 360°
Sample size	Maximum diameter		Φ50mm (Φ30mm^(*2))
Deposition	Material		Tungsten/Carbon (changeable)
Micro-sampling	Probe exchange		Load lock type
	Additional function		Touch sensing, Absorbed current imaging^(*1)

CP:Beam Cross Point

^(*1):Optional accessory
^(*2):When side entry stage is ordered