Nano-Probing System : Hitachi High-Technologies Corporation

	Measure a single MOS transistor characteristics, by directly touching down probes on cotact plug of LSI device.

Features

Meeting 90-65-45-(32)nm process devices.
Cold field emission electron gun, achieving better resolution at lower accelerating voltage.
Image shift ±100µm secured, covering measurement area widely and omitting moving stage.
Prober stage and specimen stage, a double-stage mechanism, for comfortable maneuverability and intuitive operation.
Dedicated probe-tip exchange chamber, to make it's exchange smooth & speedy.
Top & side two CCD cameras, for rough probe alignment

Item		Description
Probe unit	Number of probe unit	6 (maximum)
	Driving metdod	Piezoelectric
	Fine stroke range	5µm(X, Y)
	Coarse stroke range	5mm(X, Y)
	Probe-tip exchange	Air-locked exchange chamber
Specimen stage (DUT stage)	Position detection	Optical liner scale
	Specimen size	15mm x 15mm x 1mm thick or less
	Traverse range	±7.5mm (X, Y)
	Specimen exchange	Air-locked exchange chamber
Prober stage (Base stage)	Traverse range	±5mm at each position
Prober stage (Base stage)	Traverse position	Measurement / Specimen exchange / Rough probe alignment / Probe exchange
Electron optics	Electron gun	Cold field emission electron source
	Accelerating voltage	0.5kv~5kv (EBAC mode^(*): max. 30kV)
	Image shift	±100µm or more(@2kV,WD=15mm)
EBAC amplifier^(*)		Current amp., Differential amp.
Image display		SEM / EBAC^(*)(Single / Parallel / Overlay), Top & side CCD camera
Vacuum system		Automatic system
Display monitor		LCD monitor

^(*):Option